收藏本站
December 2013
IRLS640A
N-Channel Logic Level A-FET
200 V, 9.8 A, 180 m ?
Description
Features
These N-Channel enhancement mode power field
effect transistors are produced using Fairchild’s
proprietary, planar, DMOS technology. This advanced
technology has been especially tailored to minimize
on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices
are well suited for high efficiency switching DC/DC
converters, switch mode power supplies, DC-AC
converters for uninterrupted power supply and motor
control.
?
?
?
?
?
?
?
9.8 A, 200 V, R DS(on) = 180 m ? @ V GS = 5 V
Low G ate C harge ( Typ. 40 nC)
Low Crss ( Typ. 95 pF)
Fast S witching
100% A valanche T ested
Improved dv/dt C apability
Logic-Level Gate Drive
D
D
G
S
TO-220F
G
Absolute Maximum Ratings
S
Symbol
V DSS
I D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T C =25 ℃ )
Continuous Drain Current (T C =100 ℃ )
Value
200
9.8
6.2
Units
V
A
I DM
V GS
E AS
I AR
E AR
dv/dt
P D
T J , T STG
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T C =25 ℃ )
Linear Derating Factor
Operating Junction and
Storage Temperature Range
①
②
①
①
③
63
± 20
64
18
4.0
5
40
0.32
- 55 to +150
A
V
mJ
A
mJ
V/ns
W
W/ ℃
T L
Maximum Lead Temp. for Soldering
Purposes, 1/8 ＂ from case for 5-seconds
300
℃
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient
--
--
3.13
62.5
o
C/W
?1999 Fairchild Semiconductor Corporation
IRLS640A Rev. C0
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRLTS6342TRPBF MOSF N CH 30V 8.3A TSOP6
IRLZ14STRRPBF MOSFET N-CH 60V 10A D2PAK
IRLZ14 MOSFET N-CH 60V 10A TO-220AB
IRLZ24NSTRR MOSFET N-CH 55V 18A D2PAK
IRLZ34NL MOSFET N-CH 55V 30A TO-262
IRM-2636T RECEIVER MOD IR REMOTE
IRM-3636N3 RECEIVER MOD IR REMOTE
IRM-3638T RECEIVER MOD IR REMOTE
相关代理商/技术参数
IRLSG5653 制造商:IRF 制造商全称:International Rectifier 功能描述:INTEGRATED SWITCHER
IRLSL3034PBF 功能描述:MOSFET MOSFT 40V 343A 1.7mOhm 108nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLSL3036PBF 功能描述:MOSFET MOSFT 60V 270A 2.4mOhm 91nC Log Lvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLSL4030PBF 功能描述:MOSFET MOSFT 100V 180A 4.3mOhm 87nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLSZ14A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-220AB
IRLSZ24A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 14A I(D) | TO-220AB
IRLSZ34A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB
IRLSZ44A 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB